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- [7] STUDY OF DEFECTS IN LEC-GROWN UNDOPED SI-GAAS BY THERMALLY STIMULATED CURRENT SPECTROSCOPY MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (03): : 397 - 408
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- [9] LEC SI-GAAS DETECTORS FOR GAMMA-RAYS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 348 (2-3): : 510 - 513
- [10] Effect of long-term annealing on the electrical properties of SI-GaAs Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 pt 2 (06):