Effect of multi-step wafer annealing on the characteristic of undoped LEC SI-GaAs

被引：0
|
作者：
机构：
来源：
Guti Dianzixue Yanjiu Yu Jinzhan | / 1卷 / 64期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] EFFECT OF AMBIENT GAS ON UNDOPED LEC GaAs CRYSTAL.
    Emori, Haruo
    Matsumura, Takao
    Kikuta, Toshio
    Fukuda, Tsuguo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (11): : 1652 - 1655
  • [22] SEMI-INSULATION OF UNDOPED GAAS EPITAXIAL LAYERS BY WAFER ANNEALING
    IMAIZUMI, T
    OKAZAKI, H
    ODA, O
    APPLIED PHYSICS LETTERS, 1993, 63 (10) : 1390 - 1392
  • [23] PHOTOLUMINESCENCE OF 3 INCH UNDOPED SI LEC GAAS ANNEALED BY VARIOUS PROCEDURES
    INOUE, T
    MORI, M
    KANO, G
    YAMAMOTO, H
    ODA, O
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 219 - 224
  • [24] LEC GROWTH OF UNDOPED SI GAAS SINGLE-CRYSTALS FOR OPTOELECTRONIC APPLICATION
    OKADA, H
    KATSUMATA, T
    OBOKATA, T
    FUKUDA, T
    SUSAKI, W
    JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 319 - 322
  • [25] COMPOSITION EFFECT ON CV PROFILE AND THRESHOLD VOLTAGE FOR MESFETs FABRICATED IN UNDOPED LEC SI GaAs.
    Yasuami, Shigeru
    Fukuta, Katsuyoshi
    Watanabe, Masayuki
    Nakanisi, Takatosi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (12): : 1905 - 1907
  • [26] Si IMPLANTATION IN UNDOPED Si GaAs AND ITS ANNEALING BEHAVIOR.
    Xia, Guan-qun
    Chen, Zi-yao
    Wang, Wei-yuan
    Wang, Yong-hong
    Ma, Bi-chun
    Xi You Jin Shu/Rare Metals, 1987, 6 (02): : 97 - 100
  • [27] Rapid Thermal Annealing of Si~+-implanted SI-GaAs with Co-implantation of P~+
    Qian He
    Chen Tangsheng
    Luo Jinsheng Division of Microelectronics Technology
    RareMetals, 1990, (02) : 135 - 138
  • [28] Photoluminescence and activation on SI-GaAs by Si+ implantation and following rapid thermal annealing
    Li, GH
    Wang, CH
    Zhao, J
    Wang, ZG
    Wan, SK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 117 (1-2): : 112 - 116
  • [29] QUARTZ VERSUS PBN - THE EFFECT OF CRUCIBLE TYPE ON UNDOPED LEC GAAS
    CHANG, JSC
    MCCALL, DE
    WONG, EH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1124 - 1129
  • [30] 多步热处理对未掺杂LEC　SI-GaAs特性的影响
    李光平，汝琼娜，李静，杨瑞霞
    固体电子学研究与进展, 1996, (01) : 64 - 67
12345