Ultrafast Degenerate Pump-Probe Studies of SI-GaAs and LT-GaAs

被引：0
|
作者：
Anusha, P. T. [1 ]
Tewari, Surya P. [2 ]
Rao, S. Venugopal [1 ]
机构：
[1] Univ Hyderabad, ACRHEM, Hyderabad 500046, Andhra Pradesh, India
[2] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
来源：
2012 INTERNATIONAL CONFERENCE ON FIBER OPTICS AND PHOTONICS (PHOTONICS) | 2012年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the measurements of excited state dynamics in LT-GaAs, SI-GaAs using picosecond pump-probe experiment at 800 nm performed in non-resonant conditions (photon energy > E-g of GaAs). The intensity dependent dynamics are also investigated.
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