The development of nitride-based UV photodetectors

被引：0

作者：

Walker, D ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

OPTO-ELECTRONICS REVIEW | 2000年 / 8卷 / 01期

关键词：

nitride-based photodetectors; solar-blind p-n junction devices; high speed Schottky barrier devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this review? article, an analysis of the recent developments of nitride-based photodetectors is I reported. At the beginning, a brief introduction sketches the background of GaN and AlGaN material properties and addresses issues concerning their application in existing systems. Next, the theory behind the operation of each device is discussed, followed by significant achievements in the processing technology and progress made in understanding how, defects in the material affect the devices. Finally, the overall performance of photoconductors, p-n junction devices and Schottky barrier devices made from GaN and AlGaN is described in detail.

引用

页码：25 / 42

页数：18

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