Investigation on Hot Carrier Reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor

被引：8

作者：

Yeoh, Yun Young ^{[1
]}

Suk, Sung Dae ^{[1
]}

Li, Ming ^{[1
]}

Yeo, Kyoung Hwan ^{[1
]}

Kim, Dong-Won ^{[1
]}

Jin, Gyoyoung ^{[1
]}

Oh, Kyoungsuk ^{[1
]}

机构：

[1] Samsung Elect Co, Adv Technol Dev Team 1, R&D Ctr, Yongin 449711, Kyoungi Do, South Korea

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

GAA TSNWFET; hot carrier; nanowire channel size; oxide thickness; gate length; ISSG; RTO; GNOx;

D O I：

10.1109/IRPS.2009.5173286

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Hot carrier (HC) reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2nm thickness show worse hot carrier reliability. The worst V-D for 10 years guaranty, 1.31V, satisfies requirement of ITRS roadmap.

引用

页码：400 / 404

页数：5

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