Design of A 28GHz Reflection-Type Phase Shifter In 45-nm CMOS SOI Technology

被引：1

作者：

Tian, Yaobin ^{[1
]}

He, Wenlong ^{[1
]}

机构：

[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen, Peoples R China

来源：

2022 CROSS STRAIT RADIO SCIENCE & WIRELESS TECHNOLOGY CONFERENCE, CSRSWTC | 2022年

关键词：

phased-array; millimeter-wave; reflective-type phase shifter; CMOS technology; SIGE BICMOS;

D O I：

10.1109/CSRSWTC56224.2022.10098364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of a 28 GHz passive reflective-type phase shifter (RTPS) with low variation of insertion loss (IL) and 360 degrees phase-shift. The circuit consists of a 3-dB 90 degrees coupler, L-Type impedance matching circuit and two same triple-resonating reflective loads that require only one control voltage. Implemented in 45nm SOI CMOS technology, the proposed RTPS achieved 360 degrees phase-shift range with an IL of 8.2 +/- 1.2dB at 28 GHz while consuming zero dc power. For all the phase shift point, the return loss, S11 and S22, are lower than 20dB.

引用

页数：3

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