Design of A 28GHz Reflection-Type Phase Shifter In 45-nm CMOS SOI Technology

被引：1
|
作者：
Tian, Yaobin [1 ]
He, Wenlong [1 ]
机构：
[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen, Peoples R China
来源：
2022 CROSS STRAIT RADIO SCIENCE & WIRELESS TECHNOLOGY CONFERENCE, CSRSWTC | 2022年
关键词：
phased-array; millimeter-wave; reflective-type phase shifter; CMOS technology; SIGE BICMOS;
D O I：
10.1109/CSRSWTC56224.2022.10098364
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design of a 28 GHz passive reflective-type phase shifter (RTPS) with low variation of insertion loss (IL) and 360 degrees phase-shift. The circuit consists of a 3-dB 90 degrees coupler, L-Type impedance matching circuit and two same triple-resonating reflective loads that require only one control voltage. Implemented in 45nm SOI CMOS technology, the proposed RTPS achieved 360 degrees phase-shift range with an IL of 8.2 +/- 1.2dB at 28 GHz while consuming zero dc power. For all the phase shift point, the return loss, S11 and S22, are lower than 20dB.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] A Compact 275-320-GHz Reflection-Type Phase Shifter
    Kim, Eunjung
    Jeon, Sanggeun
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (08) : 991 - 994
  • [22] A 20-33 GHz Direct-Conversion Transmitter in 45-nm SOI CMOS
    Ren, Tiantong
    Hari, Sandeep
    Floyd, Brian A.
    2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2020,
  • [23] Tunable 0.7-2.8-GHz Reflection-Mode N-Path Filters in 45-nm SOI CMOS
    Bonner-Stewart, Jeffrey
    Wilson, Charley, III
    Floyd, Brian A.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (06) : 2343 - 2357
  • [24] 20-30 GHz Mixer-First Receiver in 45-nm SOI CMOS
    Wilson, Charley, III
    Floyd, Brian
    2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2016, : 344 - 347
  • [25] A 28GHz Power Amplifier with 23.5 dBm Psat in 65nm SOI CMOS
    Ni, Dongliang
    Li, Liangfeng
    Wu, Weijia
    Huang, Jiwei
    2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021), 2021, : 236 - 239
  • [26] 60 GHz reflection-type phase shifter using 0.13 μm CMOS body-floating switches
    Choi, S. H.
    Lee, Y. M.
    Kim, M.
    ELECTRONICS LETTERS, 2011, 47 (12) : 701 - 703
  • [27] Design of Broadband Low-Noise Amplifier in 45-nm SOI Technology
    Guo, Guanqin
    Zhang, Cheng
    He, Wenlong
    Zhu, Xi
    2021 14TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT 2021), 2021,
  • [28] 167-GHz and 155-GHz High Gain D-band Power Amplifiers in CMOS SOI 45-nm Technology
    Hamani, Abdelaziz
    Siligaris, Alexandre
    Blampey, Benjamin
    Jimenez, Jose Luis Gonzalez
    2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2021, : 261 - 264
  • [29] A tunable reflection-type filtering phase shifter using SISL technology
    Yang, Jianteng
    Ma, Kaixue
    Fu, Haipeng
    Wang, Yongqiang
    Chen, Xiong
    Yan, Ningning
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2022, 64 (11) : 1972 - 1977
  • [30] A Microstrip line Reflection-Type Phase Shifter for 60 GHz Phased Array
    Zhang, Hanxiang
    Ren, Han
    Tang, Hong
    Zheng, Bowen
    Katz, Brian
    Arigong, Bayaner
    Zhang, Hualiang
    2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 826 - 829
12345