Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

被引：32
|
作者：
Olson, B. V. [1 ]
Grein, C. H. [2 ]
Kim, J. K. [1 ]
Kadlec, E. A. [1 ]
Klem, J. F. [1 ]
Hawkins, S. D. [1 ]
Shaner, E. A. [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 26期
关键词：
LAYER SUPERLATTICES; CARRIER LIFETIMES; PERFORMANCE; GAP; DETECTORS; HGCDTE;
D O I：
10.1063/1.4939147
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1 X 10(-26) cm(6)/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K-80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K . p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. The experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe. (C) 2015 AIP Publishing LLC.
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页数：4
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