Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

被引：32

作者：

Olson, B. V. ^{[1
]}

Grein, C. H. ^{[2
]}

Kim, J. K. ^{[1
]}

Kadlec, E. A. ^{[1
]}

Klem, J. F. ^{[1
]}

Hawkins, S. D. ^{[1
]}

Shaner, E. A. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 26期

关键词：

LAYER SUPERLATTICES; CARRIER LIFETIMES; PERFORMANCE; GAP; DETECTORS; HGCDTE;

D O I：

10.1063/1.4939147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1 X 10(-26) cm(6)/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K-80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K . p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. The experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe. (C) 2015 AIP Publishing LLC.

引用

页数：4

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