Topological band crossings in epitaxial strained SnTe

被引：9

作者：

Fragkos, Sotirios ^{[1
,2
]}

Sant, Roberto ^{[3
,4
]}

Alvarez, Carlos ^{[3
,5
]}

Golias, Evangelos ^{[6
,7
]}

Marquez-Velasco, Jose ^{[1
]}

Tsipas, Polychronis ^{[1
]}

Tsoutsou, Dimitra ^{[1
]}

Aminalragia-Giamini, Sigiava ^{[1
]}

Xenogiannopoulou, Evangelia ^{[1
]}

Okuno, Hanako ^{[3
,5
]}

Renaud, Gilles ^{[3
,5
]}

Rader, Oliver ^{[6
]}

Dimoulas, Athanasios ^{[1
]}

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece

[2] Univ West Attica, Dept Mech Engn, Athens 12244, Greece

[3] Univ Grenoble Alpes, F-38400 Grenoble, France

[4] CNRS, Neel Inst, F-38042 Grenoble, France

[5] Commissariat Energie Atom & Energies Alternat, Interdisciplinary Inst Res Grenoble, F-38054 Grenoble, France

[6] Elektronenspeicherring BESSY II, Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany

[7] Free Univ Berlin, Inst Expt Phys, Arnimallee 14, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW MATERIALS | 2019年 / 3卷 / 10期

关键词：

TOTAL-ENERGY CALCULATIONS; DIRAC SEMIMETAL; DISCOVERY; CATALOG; PHASE;

D O I：

10.1103/PhysRevMaterials.3.104201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial SnTe (111) is grown by molecular-beam epitaxy on Bi2Te3 substrates. Structural evaluation indicates that SnTe deviates from cubic due to in-plane compressive strain, which induces significant changes in the electronic band structure. More specifically, a pair of gapless crossings between the two uppermost valence bands occurs in k space along the out-of-plane Gamma Z direction of the Brillouin zone, associated with a band inversion, thus defining topological three-dimensional Dirac nodes. Combined first-principles calculations and angle-resolved photoelectron spectroscopy reveal an overtilted Dirac cone indicating that the crossing is a topological type-III Dirac node at the borders between type-I and type-II Dirac nodes.

引用

页数：8

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