Topological band crossings in epitaxial strained SnTe

被引：9

作者：

Fragkos, Sotirios ^{[1
,2
]}

Sant, Roberto ^{[3
,4
]}

Alvarez, Carlos ^{[3
,5
]}

Golias, Evangelos ^{[6
,7
]}

Marquez-Velasco, Jose ^{[1
]}

Tsipas, Polychronis ^{[1
]}

Tsoutsou, Dimitra ^{[1
]}

Aminalragia-Giamini, Sigiava ^{[1
]}

Xenogiannopoulou, Evangelia ^{[1
]}

Okuno, Hanako ^{[3
,5
]}

Renaud, Gilles ^{[3
,5
]}

Rader, Oliver ^{[6
]}

Dimoulas, Athanasios ^{[1
]}

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece

[2] Univ West Attica, Dept Mech Engn, Athens 12244, Greece

[3] Univ Grenoble Alpes, F-38400 Grenoble, France

[4] CNRS, Neel Inst, F-38042 Grenoble, France

[5] Commissariat Energie Atom & Energies Alternat, Interdisciplinary Inst Res Grenoble, F-38054 Grenoble, France

[6] Elektronenspeicherring BESSY II, Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany

[7] Free Univ Berlin, Inst Expt Phys, Arnimallee 14, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW MATERIALS | 2019年 / 3卷 / 10期

关键词：

TOTAL-ENERGY CALCULATIONS; DIRAC SEMIMETAL; DISCOVERY; CATALOG; PHASE;

D O I：

10.1103/PhysRevMaterials.3.104201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial SnTe (111) is grown by molecular-beam epitaxy on Bi2Te3 substrates. Structural evaluation indicates that SnTe deviates from cubic due to in-plane compressive strain, which induces significant changes in the electronic band structure. More specifically, a pair of gapless crossings between the two uppermost valence bands occurs in k space along the out-of-plane Gamma Z direction of the Brillouin zone, associated with a band inversion, thus defining topological three-dimensional Dirac nodes. Combined first-principles calculations and angle-resolved photoelectron spectroscopy reveal an overtilted Dirac cone indicating that the crossing is a topological type-III Dirac node at the borders between type-I and type-II Dirac nodes.

引用

页数：8

共 50 条

[21] Symmetry-enforced topological band crossings in orthorhombic crystals: Classification and materials discovery
Leonhardt, Andreas
Hirschmann, Moritz M.
Heinsdorf, Niclas
Wu, Xianxin
Fabini, Douglas H.
Schnyder, Andreas P.
PHYSICAL REVIEW MATERIALS, 2021, 5 (12)
[22] MISFIT DISLOCATIONS IN EPITAXIAL PBS/SNTE(001) AND PBTE/SNTE(001) BICRYSTALS
TSUJI, M
MIZUNO, Y
SUSUKI, Y
MANNAMI, M
JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 817 - 820
[23] VALENCE BAND STRUCTURE OF SNTE
ROGERS, LM
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (07) : 845 - &
[24] The band spectrum of SnTe in emission
Barrow, RF
PROCEEDINGS OF THE PHYSICAL SOCIETY, 1940, 52 : 380 - 387
[25] CERTAIN PARAMETERS OF THE EPITAXIAL LAYER (SNTE)1-X(PBSE)X BAND-STRUCTURE
FREIK, DM
KOSTIK, BF
STARIK, PM
CHOBANYUK, VM
UKRAINSKII FIZICHESKII ZHURNAL, 1981, 26 (10): : 1743 - 1745
[26] DEPENDENCE OF ELECTRICAL AND BAND PARAMETERS OF EPITAXIAL (PBSE)1-X(SNTE)X FILMS ON COMPOSITION
FREIK, DM
KOSTIK, BF
VOROPAI, VA
INORGANIC MATERIALS, 1983, 19 (05) : 665 - 668
[27] UNPAIRED BAND CROSSINGS
RILEY, MA
GARRETT, JD
SIMPSON, J
SHARPEYSCHAFER, JF
PHYSICAL REVIEW LETTERS, 1988, 60 (07) : 553 - 556
[28] STRAINED-LAYER EPITAXY OF SNTE ON CDTE(110)
HOCHST, H
NILES, DW
ENGELHARDT, MA
HERNANDEZCALDERON, I
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 775 - 779
[29] CARRIER DENSITY DEPENDENCE OF MAGNETORESISTANCE IN EPITAXIAL SNTE
NISHIYAMA, A
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (02) : 471 - 477
[30] Fundamental laws of chiral band crossings: Local constraints, global constraints, and topological phase diagrams
Alpin, Kirill
Hirschmann, Moritz M.
Heinsdorf, Niclas
Leonhardt, Andreas
Yau, Wan Yee
Wu, Xianxin
Schnyder, Andreas P.
PHYSICAL REVIEW RESEARCH, 2023, 5 (04):

← 1 2 3 4 5 →