Waveguide-Coupled Disk Resonators on a Crack-Free Si3N4 Film with a Dense Stress Release Pattern

被引：0
|
作者：
Wu, Kaiyi [1 ]
Poon, Andrew W. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Photon Device Lab, Dept Elect & Comp Engn, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
来源：
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We deposit a crack-free 780nm-thick Si3N4 film on a dense stress release pattern on a 100mm silicon wafer. Our fabricated waveguide-coupled 920 mu m-radius Si3N4 disk resonator reveals a high loaded quality factor of 1.7x10(6). (C) 2019 The Author(s)
引用
收藏
页数：2
相关论文
共 42 条
  • [21] Crack-healing behavior of Si3N4/SiC composite under stress and low oxygen pressure
    Takahashi, Koji
    Jung, Young-Soon
    Nagoshi, Yasuto
    Ando, Kotoji
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2010, 527 (15): : 3343 - 3348
  • [22] Improvement of static fatigue strength Of Si3N4/SiC crack-healed under cyclic stress
    Takahashi, K
    Murase, H
    Yoshida, S
    Houjou, K
    Ando, K
    Saito, S
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (11) : 1953 - 1959
  • [23] Crack-healing under cyclic stress and improvement of the resultant fatigue strength of Si3N4/SiC
    Takahashi, Koji
    Ando, Kotoji
    Saito, Shinji
    SCIENCE OF ENGINEERING CERAMICS III, 2006, 317-318 : 453 - 456
  • [24] Butt-coupled interface between stoichiometric Si3N4 and thin-film plasmonic waveguides
    Dabos, G.
    Ketzaki, D.
    Tsiokos, D.
    Pleros, N.
    INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XXI, 2017, 10106
  • [25] High Finesse vertically coupled waveguide-microring resonators based on Si3N4-SiO2 technology
    Tan, FS
    Klunder, DJW
    Kelderman, H
    Hoekstra, HJWM
    Driessen, A
    PROCEEDINGS OF 2002 IEEE/LEOS WORKSHOP ON FIBRE AND OPTICAL PASSIVE COMPONENTS, 2002, : 228 - 232
  • [26] Cavity formation due to Si3N4/SiO2 film-induced stress in silicon
    Isomae, S
    Tamaki, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (01) : 340 - 345
  • [27] Cavity formation due to Si3N4/SiO2 film-induced stress in silicon
    Central Research Lab, Tokyo, Japan
    J Electrochem Soc, 1 (340-345):
  • [28] Threshold stress for crack-healing of Si3N4/SiC and resultant cyclic fatigue strength at the healing temperature
    Takahashi, K
    Ando, K
    Murase, H
    Nakayama, S
    Saito, S
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2005, 88 (03) : 645 - 651
  • [29] Bragg Grating Coupled High Q Factor Ring Resonator using LSCVD Deposited Si3N4 Film
    Cheng, Xiaoyang
    Yokoyama, Shiyoshi
    2017 22ND MICROOPTICS CONFERENCE (MOC), 2017, : 96 - 97
  • [30] Crack-healing behavior under stress and fatigue strength at elevated temperature of crack-healed Si3N4/SiC composite ceramics
    Ando, K
    Houjyou, K
    Chu, MC
    Takahashi, K
    Yao, F
    Sato, S
    EURO CERAMICS VII, PT 1-3, 2002, 206-2 : 819 - 822
12345