Electron mobility on AlGaN/GaN heterostructure interface

被引：14
|
作者：
Zhao, GY
Ishikawa, H
Egawa, T
Jimbo, T
Umeno, M
机构：
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期
关键词：
AlGaN/GaN; 2DEG; mobility; PL; C-V;
D O I：
10.1016/S1386-9477(00)00097-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al(0.11)Ga(0.89)N/GaN heterostructure shows the highest Hall mobility of 11 823 cm(2)/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：963 / 966
页数：4
相关论文
共 50 条
  • [31] Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors
    Feng Qian
    Du Kai
    Li Yu-Kun
    Shi Peng
    Feng Qing
    CHINESE PHYSICS LETTERS, 2013, 30 (12)
  • [32] Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors
    Jeon, Dae-Young
    Kim, Do-Kywn
    Park, So Jeong
    Koh, Yumin
    Cho, Chu-Young
    Kim, Gyu-Tae
    Park, Kyung-Ho
    MICROELECTRONIC ENGINEERING, 2018, 199 : 40 - 44
  • [33] Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface
    Chen, Dingbo
    Wan, Lijun
    Li, Jie
    Liu, Zhikun
    Li, Guoqiang
    SOLID-STATE ELECTRONICS, 2019, 151 : 60 - 64
  • [34] Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance
    Wang, Dong-Po
    Wu, Chi-Chang
    Wu, Chia-Chun
    APPLIED PHYSICS LETTERS, 2006, 89 (16)
  • [35] Electron mobility and transfer characteristics in AlGaN/GaN HEMTs
    Cordier, Y
    Hugues, M
    Lorenzini, P
    Semond, F
    Natali, F
    Massies, J
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2720 - 2723
  • [36] Electron mobility in very low density GaN/AlGaN/GaN heterostructures
    Manfra, MJ
    Baldwin, KW
    Sergent, AM
    Molnar, RJ
    Caissie, J
    APPLIED PHYSICS LETTERS, 2004, 85 (10) : 1722 - 1724
  • [37] Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress
    Brown, David F.
    Rajan, Siddharth
    Keller, Stacia
    Hsieh, Yun-Hao
    DenBaars, Steven P.
    Mishra, Umesh K.
    APPLIED PHYSICS LETTERS, 2008, 93 (04)
  • [38] Fabrication of AlGaN/GaN high electron mobility transistors
    Wu, T
    Hao, ZB
    Guo, WP
    Wu, SW
    Luo, Y
    Zeng, QM
    Li, XJ
    APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, 2002, 4905 : 335 - 337
  • [39] Model the AlGaN/GaN High Electron Mobility Transistors
    Wang, Yan
    Cheng, Xiaoxu
    Li, Xiaojian
    NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 738 - 743
  • [40] Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer
    A. Yu. Pavlov
    K. N. Tomosh
    V. Yu. Pavlov
    D. N. Slapovskiy
    A. V. Klekovkin
    I. A. Ivchenko
    Nanobiotechnology Reports, 2022, 17 : S45 - S49
12345