Wavelength dependence of the ultrafast third-order nonlinearity of Silicon

被引：0
|
作者：
Foster, Mark A. [1 ]
Gaeta, Alexander L. [1 ]
机构：
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
来源：
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measure the wavelength dependence of the nonlinear index n(2) and two-photon absorption coefficients of bulk silicon below the band edge. In contrast to direct-bandgap semiconductors, silicon shows a positive n(2) throughout the band gap. (C)2007 Optical Society of America
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页码：735 / 736
页数：2
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