Wavelength dependence of the ultrafast third-order nonlinearity of Silicon

被引：0

作者：

Foster, Mark A. ^{[1
]}

Gaeta, Alexander L. ^{[1
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure the wavelength dependence of the nonlinear index n(2) and two-photon absorption coefficients of bulk silicon below the band edge. In contrast to direct-bandgap semiconductors, silicon shows a positive n(2) throughout the band gap. (C)2007 Optical Society of America

引用

页码：735 / 736

页数：2

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