Reflection electron microscopy of molecular beam epitaxial II-VI and III-V semiconductor surfaces

被引：0
|
作者：
Preis, H [1 ]
Rosenauer, A [1 ]
Zweck, J [1 ]
Gebhardt, W [1 ]
机构：
[1] UNIV REGENSBURG,INST FESTKORPERPHYS,D-93040 REGENSBURG,GERMANY
来源：
EUROPEAN JOURNAL OF CELL BIOLOGY | 1997年 / 74卷
关键词：
D O I：
暂无
中图分类号：
Q2 [细胞生物学];
学科分类号：
071009 ; 090102 ;
摘要：
引用
收藏
页码：51 / 51
页数：1
相关论文
共 50 条
  • [31] Growth of II-VI/III-V heterovalent quantum structures
    Lassise, Maxwell B.
    Wang, Peng
    Tracy, Brian D.
    Chen, Guopeng
    Smith, David J.
    Zhang, Yong-Hang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (02):
  • [32] Controlling the interface between II-VI and III-V semiconductors
    Zahn, Dietrich R.T.
    Advanced Materials for Optics and Electronics, 1994, 3 (1-6): : 3 - 9
  • [33] II-VI/III-V HETEROINTERFACES - EPILAYER ON EPILAYER STRUCTURES
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    OTSUKA, N
    NURMIKKO, AV
    MELLOCH, MR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C380 - C380
  • [34] Kinetics of II-VI and III-V colloidal semiconductor nanocrystal growth: "Focusing" of size distributions
    Peng, XG
    Wickham, J
    Alivisatos, AP
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (21) : 5343 - 5344
  • [35] LATERAL PIEZOELECTRIC FIELDS - A UNIVERSAL FEATURE OF STRAINED III-V AND II-VI SEMICONDUCTOR HETEROSTRUCTURES
    ILG, M
    HEBERLE, A
    PLOOG, KH
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 739 - 742
  • [36] Femtosecond photoelectron spectroscopy of II-VI and III-V semiconductors
    Leblans, M
    Thoma, RKR
    LoPresti, JL
    Reichling, M
    Williams, RT
    OPTICAL INORGANIC DIELECTRIC MATERIALS AND DEVICES, 1997, 2967 : 2 - 9
  • [37] LATTICE-DYNAMICS OF II-VI, III-V COMPOUNDS
    TALWAR, DN
    AGRAWAL, BK
    SOLID STATE COMMUNICATIONS, 1972, 11 (12) : 1691 - 1694
  • [38] DYNAMIC DISPLACEMENT OF ATOMS IN II-VI, III-V COMPOUNDS
    TALWAR, DN
    AGRAWAL, BK
    SOLID STATE COMMUNICATIONS, 1974, 14 (01) : 25 - 27
  • [39] MOBILITY OF HOLES OF ZINCBLENDE III-V AND II-VI COMPOUNDS
    KRANZER, D
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 26 (01): : 11 - 52
  • [40] Annealing behaviour and ranges of implanted ions in III-V and II-VI compound semiconductor materials
    Vakevainen, K
    Ahlgren, T
    Rauhala, E
    Raisanen, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 : 563 - 567
12345