Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

被引：110

作者：

Hiyoshi, Toru ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 09期

基金：

日本学术振兴会;

关键词：

ENERGY-ELECTRON IRRADIATION; CHEMICAL-VAPOR-DEPOSITION; TRANSIENT SPECTROSCOPY; DEFECTS; EPILAYERS; SILICON; GENERATION; OXIDATION; LIFETIME; GROWTH;

D O I：

10.1143/APEX.2.091101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By thermal oxidation of 4H-SiC at 1150-1300 degrees C, the Z(1/2) and EH6/7 concentrations can be reduced to below 1 x 10(11) cm(-3). By the oxidation, however, a high concentration of HK0 center (E-V + 0.78 eV) is generated. Additional annealing in Ar at 1550 degrees C results in elimination of the HK0 center. Thus, all the major deep levels can be eliminated by the two-step thermal treatment. Based on the depth profiles of deep levels, a model for the defect generation and elimination is proposed. The carrier lifetime in 4H-SiC epilayers has been improved from 0.64 (as-grown) to 4.52 mu s by this method. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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