GaN/AlGaN intersubband optoelectronic devices

被引：84

作者：

Machhadani, H. ^{[1
]}

Kandaswamy, P. ^{[2
]}

Sakr, S. ^{[1
]}

Vardi, A. ^{[3
]}

Wirtmueller, A. ^{[2
]}

Nevou, L. ^{[1
]}

Guillot, F. ^{[2
]}

Pozzovivo, G. ^{[4
]}

Tchernycheva, M. ^{[1
]}

Lupu, A. ^{[1
]}

Vivien, L. ^{[1
]}

Crozat, P. ^{[1
]}

Warde, E. ^{[1
]}

Bougerol, C. ^{[2
]}

Schacham, S. ^{[3
]}

Strasser, G. ^{[4
]}

Bahir, G. ^{[3
]}

Monroy, E. ^{[2
]}

Julien, F. H. ^{[1
]}

机构：

[1] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] CEA, Equipe Mixte CEA CNRS Nanophys & Semicond, INAC SP2M PSC, F-38054 Grenoble 9, France

[3] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[4] Vienna Univ Technol, Zentrum Mikro & Nanostrukturen, A-1040 Vienna, Austria

来源：

NEW JOURNAL OF PHYSICS | 2009年 / 11卷

关键词：

QUANTUM-WELLS; MU-M; NONLINEAR SUSCEPTIBILITY; INFRARED PHOTODETECTOR; WAVELENGTH RANGE; ABSORPTION; DOTS; TRANSITIONS; RELAXATION; MODULATOR;

D O I：

10.1088/1367-2630/11/12/125023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near-to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.

引用

页数：16

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