Effects accompanying GaN substrate misorientation in growth of InGaN and AlGaN layers

被引：0
|
作者：
Leszczynski, Mike [1 ,2 ]
Krysko, Marcin [1 ]
Czernecki, Robert [1 ,2 ]
Sarzynski, Marcin [1 ,2 ]
Prystawko, Pawel [1 ,2 ]
Domagla, Jarek [3 ]
机构：
[1] Inst High Pressure Phys, PL-01142 Warsaw, Poland
[2] TopGaN Ltd, PL-01142 Warsaw, Poland
[3] Inst Phys, Warsaw, Poland
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2011年 / 67卷
关键词：
semiconductors; GaN; epitaxy;
D O I：
10.1107/S0108767311089835
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
MS28.P03
引用
收藏
页码：C405 / C405
页数：1
相关论文
共 50 条
  • [31] MOCVD growth of GaN on grooved AlGaN/GaN layers for inner stripe lasers
    Nakamura, S
    Ishida, M
    Hashimoto, T
    Orita, M
    Imafuji, O
    Yuri, M
    Sugino, T
    Itoh, K
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 162 - 165
  • [32] Optical characterization of InGaN layers and GaN/InGaN/GaN double heterostructures
    Justus-Liebig-Univ, Giessen, Germany
    Mater Sci Forum, pt 2 (1311-1314):
  • [33] The effect of AlGaN bulk and AlGaN/GaN superlattice cladding layers on performance characteristics of deep violet InGaN DQW lasers
    Amirhoseiny, Maryam
    Alahyarizadeh, Ghasem
    VACUUM, 2017, 141 : 139 - 143
  • [34] Comparison of AlGaN/GaN HEMTs Grown and Fabricated on Sapphire Substrate with AlN and GaN Nucleation Layers
    Gao, N.
    Fang, Y. L.
    Yin, J. Y.
    Wang, B.
    Guo, Y. M.
    He, Z. Z.
    Gu, G. D.
    Guo, H. Y.
    Feng, Z. H.
    Cai, S. J.
    2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS), 2017, : 195 - 199
  • [35] Optical characterization of InGaN layers and GaN/InGaN/GaN double heterostructures
    Graber, A
    Averbeck, R
    Barnhofer, U
    Riechert, H
    Tews, H
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1311 - 1314
  • [36] Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers
    Lundin, WV
    Sakharov, AV
    Usikov, AS
    Bedarev, DA
    Tsatsulnikov, AF
    Tu, RC
    Yin, SB
    Chi, JY
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (01): : 73 - 77
  • [37] Performance of an InGaN/GaN/AlGaN MSM photodetector
    Hamdoune, A.
    Allam, Z.
    Boudaoud, C.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (1-2): : 33 - 36
  • [38] Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers
    Yang, C. C.
    Sheu, J. K.
    Liang, Xin-Wei
    Huang, Min-Shun
    Lee, M. L.
    Chang, K. H.
    Tu, S. J.
    Huang, Feng-Wen
    Lai, W. C.
    APPLIED PHYSICS LETTERS, 2010, 97 (02)
  • [39] Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate
    Stanczyk, Szymon
    Czyszanowski, Tomasz
    Kucharski, Robert
    Kafar, Ania
    Suski, Tadek
    Marona, Lucja
    Targowski, Grzegorz
    Bockowski, Michal
    Perlin, Piotr
    GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
  • [40] AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier
    Liu Guo-Guo
    Wei Ke
    Huang Jun
    Liu Xin-Yu
    Niu Jie-Bin
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2011, 30 (04) : 289 - 292
12345