Effects accompanying GaN substrate misorientation in growth of InGaN and AlGaN layers

被引：0
|
作者：
Leszczynski, Mike [1 ,2 ]
Krysko, Marcin [1 ]
Czernecki, Robert [1 ,2 ]
Sarzynski, Marcin [1 ,2 ]
Prystawko, Pawel [1 ,2 ]
Domagla, Jarek [3 ]
机构：
[1] Inst High Pressure Phys, PL-01142 Warsaw, Poland
[2] TopGaN Ltd, PL-01142 Warsaw, Poland
[3] Inst Phys, Warsaw, Poland
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2011年 / 67卷
关键词：
semiconductors; GaN; epitaxy;
D O I：
10.1107/S0108767311089835
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
MS28.P03
引用
收藏
页码：C405 / C405
页数：1
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