Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration

被引：2

作者：

Matsuzaka, S. ^{[1
,2
]}

Ohno, Y. ^{[1
]}

Ohno, H. ^{[1
,2
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 980, Japan

[2] Japan Sci & Technol Agcy, Semicond Spintron Project, Tokyo, Japan

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 01期

关键词：

Spin current; Spin Hall effect; Kerr rotation; SEMICONDUCTORS;

D O I：

10.1007/s10948-009-0558-6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the doping concentration (N (D)) dependence of the extrinsic spin Hall effect (SHE) in n-doped GaAs with N (D) raging from 3x10(16) cm(-3) to 5x10(17) cm(-3). By using scanning Kerr microscopy (SKM) measurements, we observed the Kerr rotation signal due to the spin accumulation near the channel edges in all the samples with different N (D). Moreover, the position and in-plane magnetic field dependence of the Kerr rotation signal are found to vary with N (D). We analyzed the N (D) dependence of the spin Hall conductivity by taking account of the N (D)-dependent spin lifetime based on the typical drift-diffusion model.

引用

页码：37 / 39

页数：3

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