Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration

被引：2
|
作者：
Matsuzaka, S. [1 ,2 ]
Ohno, Y. [1 ]
Ohno, H. [1 ,2 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 980, Japan
[2] Japan Sci & Technol Agcy, Semicond Spintron Project, Tokyo, Japan
来源：
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 01期
关键词：
Spin current; Spin Hall effect; Kerr rotation; SEMICONDUCTORS;
D O I：
10.1007/s10948-009-0558-6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the doping concentration (N (D)) dependence of the extrinsic spin Hall effect (SHE) in n-doped GaAs with N (D) raging from 3x10(16) cm(-3) to 5x10(17) cm(-3). By using scanning Kerr microscopy (SKM) measurements, we observed the Kerr rotation signal due to the spin accumulation near the channel edges in all the samples with different N (D). Moreover, the position and in-plane magnetic field dependence of the Kerr rotation signal are found to vary with N (D). We analyzed the N (D) dependence of the spin Hall conductivity by taking account of the N (D)-dependent spin lifetime based on the typical drift-diffusion model.
引用
收藏
页码：37 / 39
页数：3
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