CMOS Active Pixel Sensor (APS) imager for scientific applications

被引:8
|
作者
Ay, SU [1 ]
Lesser, M [1 ]
Fossum, ER [1 ]
机构
[1] Micron Imaging, Pasadena, CA 91101 USA
关键词
CMOS APS; active pixel sensor; image sensor; scientific imager; backside illumination; guider; UV sensor;
D O I
10.1117/12.461429
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
A 512x512 CMOS Active Pixel Sensor (APS) imager has been designed, fabricate, and tested for frontside illumination suitable for use in astronomy specifically in telescope guider systems as a replacement of CCD chips. The imager features a high-speed differential analog readout, 15 mum pixel pitch, 75 % fill factor (1717), 62 dB dynamic range, 315Ke- pixel capacity, less than 0.25% fixed pattern noise (FPN), 45 dB signal to noise ratio (SNR) and frame rate of up to 40 FPS. Design was implemented in a standard 0.5 mum CMOS process technology consuming less than 200mWatts on a single 5 Volt power supply. CMOS Active Pixel Sensor (APS) imager was developed with pixel structure suitable for both frontside and backside illumination holding large number of electron in relatively small pixel pitch of 15 mum. High-speed readout and signal processing circuits were designed to achieve low fixed pattern noise (FPN) and nonuniformity to provide CCD-like analog outputs. Target spectrum range of operation for the imager is in near ultraviolet (300-400 nm) with high quantum efficiency. This device is going to be used as a test vehicle to develop backside-thinning process.
引用
收藏
页码:271 / 278
页数:8
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