An 88.5-110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications

被引：60
|
作者：
Feng, Guangyin [1 ]
Boon, Chirn Chye [1 ]
Meng, Fanyi [1 ]
Yi, Xiang [1 ]
Li, Chenyang [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, IC Design Ctr Excellence, VIRTUS, Singapore 639798, Singapore
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 02期
关键词：
CMOS amplifier; gain distribution; LNA; millimeter-wave imaging; millimeter-wave integrated circuits; RECEIVER;
D O I：
10.1109/LMWC.2016.2517071
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a wideband millimeter-wave low-noise amplifier (LNA) in a 65 nm CMOS technology. The amplifier adopts five-stage cascode topology with L-type input matching and T-type output matching. By distributing the peak gains of first four stages at two frequency points, the LNA achieves a flat gain response over a wide bandwidth. The measurement results show that the amplifier features a peak gain of 16.7 dB at 104 GHz, a minimum NF of 7.2 dB, and a 3 dB bandwidth of 21.5 GHz. The LNA consumes 48.6 mW and occupies a compact core area of 0.05 mm(2).
引用
收藏
页码：134 / 136
页数：3
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