An 88.5-110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications

被引：60

作者：

Feng, Guangyin ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Meng, Fanyi ^{[1
]}

Yi, Xiang ^{[1
]}

Li, Chenyang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, IC Design Ctr Excellence, VIRTUS, Singapore 639798, Singapore

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 02期

关键词：

CMOS amplifier; gain distribution; LNA; millimeter-wave imaging; millimeter-wave integrated circuits; RECEIVER;

D O I：

10.1109/LMWC.2016.2517071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a wideband millimeter-wave low-noise amplifier (LNA) in a 65 nm CMOS technology. The amplifier adopts five-stage cascode topology with L-type input matching and T-type output matching. By distributing the peak gains of first four stages at two frequency points, the LNA achieves a flat gain response over a wide bandwidth. The measurement results show that the amplifier features a peak gain of 16.7 dB at 104 GHz, a minimum NF of 7.2 dB, and a 3 dB bandwidth of 21.5 GHz. The LNA consumes 48.6 mW and occupies a compact core area of 0.05 mm(2).

引用

页码：134 / 136

页数：3

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