InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure

被引：0

作者：

Wang, WC ^{[1
]}

Lin, KP ^{[1
]}

Yu, KH ^{[1
]}

Lin, KW ^{[1
]}

Yen, CH ^{[1
]}

Chiou, WH ^{[1
]}

Wang, CK ^{[1
]}

Liu, WC ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

来源：

COMMAD 2000 PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/COMMAD.2000.1022935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A heterojunction bipolar transistor with superlattice emitter structure based on InP/InGaAs material system has been demonstrated. Two devices with different period of superlattice and emitter thickness were proposed. By introducing the superlattice into the emitter, the confinement of holes is enhanced. Experimentally, for higher periods of superlattice, the current gain is enhanced and more stable temperature-dependent characteristics are observed. The common-emitter current gains up to 170 and 54 are obtained for the studied devices with emitter thickness of 800Angstrom and 150Angstrom, respectively.

引用

页码：234 / 237

页数：4

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