Fabrication and performance of 1.2 kV, 12.9 mΩcm2 4H-SiC epilayer channel MOSFET

被引：6

作者：

Tarui, Y. ^{[1
]}

Watanabe, T. ^{[1
]}

Fujihira, K. ^{[1
]}

Miura, N. ^{[1
]}

Nakao, Y. ^{[1
]}

Imaizumi, M. ^{[1
]}

Sumitani, H. ^{[1
]}

Takami, T. ^{[1
]}

Ozeki, T. ^{[1
]}

Oomori, T. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Corp, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷

关键词：

MOSFET; epilayer channel; ON-resistance; breakdown voltage;

D O I：

10.4028/www.scientific.net/MSF.527-529.1285

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC epilayer channel MOSFETs are fabricated. The NIOSFETs have an n(-) epilayer channel which improves the surface where the MOS channel is formed. By the optimization of the epilayer channel and the MOSFET cell structure, ail ON-resistance of 12.9 m Omega cm(2) is obtained at V-G = 12 V (Eox = 2.9 MW/cm). A normally-OFF operation and stable avalanche breakdown is obtained at the drain voltage larger than 1.2 kV. Both the ON-resistance and the breakdown voltage increase slightly with an increase in temperature. This behavior is favorable for high power operation. By the evaluation of the control MOSFETs with n(+) implanted channel, the resistivity of the MOS channel is estimated. The MOS channel resistivity is proportional to the channel length and it corresponds to an effective channel mobility of about 20 cm(2)/Vs.

引用

页码：1285 / +

页数：2

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