Electrical Parameters Shifts of 1.2kV 4H-SiC MOSFET under Cosmic Radiations

被引：0

作者：

Li, Sheng ^{[1
]}

Tian, Ye ^{[1
]}

Wei, Jiaxing ^{[1
]}

Liu, Siyang ^{[1
]}

Sun, Weifeng ^{[1
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing, Jiangsu, Peoples R China

来源：

2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2017年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performances of 4H-SiC power Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with defects induced by cosmic radiations are studied in this paper. By SRIM and SILVACO T-CAD simulations, the radiation effects on the electrical parameters of the device are observed. The results indicate that the radiations from different directions induce defects in different regions of the device. The defects under the P+ source make the drain source on-state resistance (R-dson) increase obviously. The defects in the drift region can result in little increase of the drain-source breakdown voltage (BV).

引用

页数：4

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