Electrical Parameters Shifts of 1.2kV 4H-SiC MOSFET under Cosmic Radiations

The performances of 4H-SiC power Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with defects induced by cosmic radiations are studied in this paper. By SRIM and SILVACO T-CAD simulations, the radiation effects on the electrical parameters of the device are observed. The results indicate that the radiations from different directions induce defects in different regions of the device. The defects under the P+ source make the drain source on-state resistance (R-dson) increase obviously. The defects in the drift region can result in little increase of the drain-source breakdown voltage (BV).