Investigation of Robust Reliability Performance for 1.2kV 4H-SiC Trench MOSFET with deep P structure

被引：0
|
作者：
Choi, Jake [1 ]
Lee, Kwangwon [2 ]
Kim, Howard [3 ]
机构：
[1] Onsemi, Qual & Reliabil, South Portland, ME 04106 USA
[2] Onsemi, Elect Design, Bucheon, South Korea
[3] Onsemi, Qualty & Reliabil, Bucheon, South Korea
来源：
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年
关键词：
Deep P; Gate Oxide Integrity; TDDB; UIS;
D O I：
10.1109/EDTM58488.2024.10511600
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The primary goal of this paper is to assess the reliability performance of a 1200 V 4H-SiC trench MOSFET, incorporating a deep P structure to effectively shield the trench bottom oxide. The main objective is to enhance the device's capacity to withstand high-current pulses without experiencing failures. Additionally, improvements have been implemented in the gate oxide process to ensure reliable gate oxide integrity, with a specified breakdown voltage and charge to breakdown (QBD). The investigation also utilized the linear E-model to predict the intrinsic time-dependent dielectric breakdown lifetime. Furthermore, a breakdown voltage stability test was carried out by package and wafer level to compare the device's reliability.
引用
收藏
页码：130 / 132
页数：3
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