Noncontact deep level photo-thermal spectroscopy: Technique and application to semi-insulating GaAs wafers

被引：14
|
作者：
Xia, Jun [1 ]
Mandelis, Andreas [1 ]
机构：
[1] Univ Toronto, CADIFT, Dept Mech & Ind Engn, Toronto, ON M5S 3G8, Canada
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1063/1.2437686
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A purely optical deep level photothermal spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-band-gap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a vertical-gradient-freeze grown SI-GaAs wafer, and the very first results are presented. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GAAS WAFERS
    YASUAMI, S
    MIKAMI, H
    HOJO, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (10): : 1567 - 1569
  • [42] INHOMOGENEITY OF SEMI-INSULATING GAAS WAFERS WITH NEARLY UNIFORM RESISTIVITY DISTRIBUTION
    SIEGEL, W
    WITTE, H
    KUHNEL, G
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01): : K35 - K37
  • [43] Complete set of deep traps in semi-insulating GaAs
    Pavlovic, M
    Desnica, UV
    Gladic, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (08) : 4563 - 4570
  • [44] Investigations on semi-insulating GaAs by surface photovoltaic spectroscopy
    Chen, Yibao
    Jiang, Desheng
    Wang, Ruozhen
    Zheng, Hongjun
    Sun, Baoquan
    [J]. Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 2000, 19 (01): : 15 - 18
  • [45] The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy
    Chen, YB
    Jiang, DS
    Wang, RZ
    Zheng, HJ
    Sun, BQ
    [J]. JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (01) : 15 - 18
  • [46] Complete set of deep traps in semi-insulating GaAs
    [J]. 1600, American Institute of Physics Inc. (88):
  • [47] NONCONTACT PHOTOTHERMAL INFRARED RADIOMETRIC DEEP-LEVEL TRANSIENT SPECTROSCOPY OF GAAS WAFERS
    MANDELIS, A
    BUDIMAN, RA
    VARGAS, M
    WOLFF, D
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1582 - 1584
  • [48] Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
    Kaminski, P
    Pawlowski, M
    Cwirko, R
    Palczewska, M
    Kozlowski, R
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3): : 213 - 216
  • [49] THERMAL-CONVERSION MECHANISM IN SEMI-INSULATING GAAS
    OHNO, H
    USHIROKAWA, A
    KATODA, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8226 - 8228
  • [50] ANNEALING AND THERMAL CYCLING EFFECTS IN SEMI-INSULATING GAAS
    LOOK, DC
    [J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 1 - 10
12345