Noncontact deep level photo-thermal spectroscopy: Technique and application to semi-insulating GaAs wafers

被引：14
|
作者：
Xia, Jun [1 ]
Mandelis, Andreas [1 ]
机构：
[1] Univ Toronto, CADIFT, Dept Mech & Ind Engn, Toronto, ON M5S 3G8, Canada
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1063/1.2437686
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A purely optical deep level photothermal spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-band-gap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a vertical-gradient-freeze grown SI-GaAs wafer, and the very first results are presented. (c) 2007 American Institute of Physics.
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页数：3
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