Noncontact deep level photo-thermal spectroscopy: Technique and application to semi-insulating GaAs wafers

被引：14
|
作者：
Xia, Jun [1 ]
Mandelis, Andreas [1 ]
机构：
[1] Univ Toronto, CADIFT, Dept Mech & Ind Engn, Toronto, ON M5S 3G8, Canada
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1063/1.2437686
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A purely optical deep level photothermal spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-band-gap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a vertical-gradient-freeze grown SI-GaAs wafer, and the very first results are presented. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Noncontact Deep Level Photo-Thermal Spectroscopy of semi-insulating GaAs
    J. Xia
    A. Mandelis
    [J]. The European Physical Journal Special Topics, 2008, 153 : 283 - 285
  • [2] Noncontact Deep Level Photo-Thermal Spectroscopy of semi-insulating GaAs
    Xia, J.
    Mandelis, A.
    [J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS, 2008, 153 (1): : 283 - 285
  • [3] Noncontact photothermal radiometric deep-level transient spectroscopy of undoped semi-insulating GaAs
    Budiman, RA
    Mandelis, A
    Koutzarov, IP
    Ruda, HE
    [J]. 9TH INTERNATIONAL CONFERENCE ON PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA, CONFERENCE DIGEST, 1996, : 83 - 84
  • [4] Noncontact photothermal radiometric deep-level transient spectroscopy of undoped semi-insulating GaAs
    Budiman, RA
    Mandelis, A
    Koutzarov, IP
    Ruda, HE
    Shen, J
    [J]. PROGRESS IN NATURAL SCIENCE, 1996, 6 : S494 - S497
  • [5] NEW TECHNIQUE FOR SPECTROSCOPY OF DEEP LEVELS IN INSULATING MATERIALS - APPLICATION TO STUDY OF SEMI-INSULATING GAAS
    MARTIN, GM
    BOIS, D
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C135 - C135
  • [6] Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements
    Fukuyama, A
    Memon, A
    Sakai, K
    Akashi, Y
    Ikari, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1751 - 1754
  • [7] DEEP-LEVEL PHOTO-LUMINESCENCE IN ANNEALED SEMI-INSULATING GAAS
    NAKASHIMA, H
    MATSUNAGA, N
    SHIRAKI, Y
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 203 - 208
  • [8] THERMOELECTRIC EFFECT SPECTROSCOPY OF DEEP LEVELS - APPLICATION TO SEMI-INSULATING GAAS
    SANTIC, B
    DESNICA, UV
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (26) : 2636 - 2638
  • [9] Deep Level Photo-Thermal Spectroscopy
    Xia, J.
    Mandelis, A.
    [J]. EMERGING TECHNOLOGIES IN NON-DESTRUCTIVE TESTING, 2008, : 187 - 192
  • [10] PHOTO-DEEP-LEVEL FOURIER SPECTROSCOPY IN SEMI-INSULATING BULK MATERIALS
    IKEDA, K
    TAKAOKA, H
    ISHII, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11): : 1454 - 1458
12345