Test structures for CMOS-compatible silicon pressure sensors reliability characterization

被引：0

作者：

Montané, E ^{[1
]}

Bota, S ^{[1
]}

Marco, S ^{[1
]}

Carmona, M ^{[1
]}

Samitier, J ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Elect, E-08028 Barcelona, Spain

来源：

DESIGN, TEST, INTEGRATION, AND PACKAGING OF MEMS/MOEMS, PROCEEDINGS | 2000年 / 4019卷

关键词：

pressure sensor; CMOS; test structures; piezoresistors;

D O I：

10.1117/12.382301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pressure sensors structures have been fabricated in a commercial CMOS foundry technology using a post-processing for back-side wafer micromachining. In order to predict the sensor response to an externally applied differential pressure, the structure behavior has been simulated by Finite Element Methods. The design and fabrication of test structures for these sensor devices is described. Experimental results obtained using these structures are presented.

引用

页码：250 / 256

页数：7

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