Bipolar Transistor Excess Phase Modeling in Verilog-A

被引:4
|
作者
McAndrew, Colin C. [1 ]
Huszka, Zoltan [2 ]
Coram, Geoffrey J. [3 ]
机构
[1] Freescale Semicond, Tempe, AZ 85284 USA
[2] Austriamicrosyst AG, A-8141 Unterpremstatten, Unterpremstaett, Austria
[3] Analog Devices Inc, Wilmington, MA USA
关键词
Bipolar transistors; circuit simulation; semiconductor device modeling; SPICE;
D O I
10.1109/JSSC.2009.2022667
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The collector current I-c of a bipolar transistor does not instantaneously respond to changes in applied base-emitter voltage V-be; its response exhibits a time lag because of the finite transit time of carriers through the transistor, which is manifest as a phase lag (or "excess phase") in the frequency domain. In this paper we present an excess phase model that has a constant magnitude response, in contrast to previous models which introduce a change in magnitude as well as in phase, and detail how our model can be implemented in Verilog-A. In addition, we show how a bias dependence of the time lag can be added to the Verilog-A implementation of the Weil-McNamee excess phase model without introducing undesired behavior.
引用
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页码:2267 / 2275
页数:9
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