Microwave power SiC MESFETs and GaN HEMTs

被引：6

作者：

Zhang, AP ^{[1
]}

Rowland, LB ^{[1
]}

Kaminsky, EB ^{[1
]}

Kretchmer, JW ^{[1
]}

Beaupre, RA ^{[1
]}

Garrett, JL ^{[1
]}

Tucker, JB ^{[1
]}

Edward, BJ ^{[1
]}

Foppes, J ^{[1
]}

Allen, AF ^{[1
]}

机构：

[1] Gen Elect Global Res Ctr, Niskayuna, NY 12309 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated SiC MESFETs with more than 60 watts of output power at 450 MHz from single 21.6mm, gate periphery devices (2.9 W/mm) and 27 watts of output power at 3 GHz from single 14.4mm SiC MESFET devices (1.9 W/mm). We have also demonstrated more than 6.7 W/mm CW power from 400 mum GaN/AlGaN HEMT devices for X band (10 GHz) applications. These excellent device performances have been attributed to the improved substrate and epitaxial films quality, optimized device thermal management, and enhanced device fabrication technologies. The substrates and epitaxial films from different sources were compared and some showed significant less SiC substrate micropipes confirmed by X-ray topography and epitaxial defects characterized by optical defect mapping.

引用

页码：181 / 185

页数：5

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