AlGaN/GaN HEMTs with Thermal Oxidation Treatment for Microwave Power Applications

被引：0

作者：

Meng, Di ^{[1
]}

Liu, Shenghou ^{[1
]}

Lin, Shuxun ^{[1
]}

Wen, Cheng P. ^{[1
]}

Wang, Jinyan ^{[1
]}

Hao, Yilong ^{[1
]}

Wu, Wengang ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

HETEROSTRUCTURE; TRANSISTOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) with thermal oxidation treatment (TOT) are found to exhibit very low gate leakage current (10(-7) A/mm of gate periphery up to -20 V applied reverse gate bias) and high maximum extrinsic transconductance (180 mS/mm) The two-dimensional electron gas concentration increased obviously after the oxidation treatment. A current gain cutoff frequency (f(T)) of 36 GHz and a maximum oscillation frequency (f(MAX)) of 60 GHz are deduced from S-parameter measurements for transistors with a gate length of 0.4 mu m. The high performance TOT AlGaN/GaN HEMTs are highly promising for microwave power amplifier applications in radar and communication systems.

引用

页码：869 / 871

页数：3

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