High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor

被引：16
|
作者：
Pang, LYS [1 ]
Chan, SSM [1 ]
Johnston, C [1 ]
Chalker, PR [1 ]
Jackman, RB [1 ]
机构：
[1] AEA TECHNOL,HARWELL LAB B552,DIDCOT OX11 0RA,OXON,ENGLAND
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 2-4期
关键词：
diamond; device; electrical properties; ion implantation;
D O I：
10.1016/S0925-9635(96)00756-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High temperature p-type depletion-mode metal-insulator-semiconductor field-effect-transistors with intrinsic diamond gates have been fabricated from thin film polycrystalline diamond. They have been successfully operated at 300 degrees C with low leakage currents, and exhibit complete channel current pinch-off and modulation. A transconductance of 174 mu S mm(-1) has been measured, the highest reported value to date for this type of device. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：333 / 338
页数：6
相关论文
共 50 条
  • [1] Highly improved electrical properties of diamond metal-insulator-semiconductor field-effect-transistor prepared by ultrahigh vacuum process
    Yun, Y
    Maki, T
    Tanaka, H
    Kobayashi, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2640 - 2645
  • [2] Modeling of Metal-Semiconductor Field-Effect-Transistor on H-terminated polycrystalline diamond
    Pasciuto, B.
    Ciccognani, W.
    Limiti, E.
    Calvani, P.
    Rossi, M. C.
    Conte, G.
    [J]. ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, 2009, : 261 - +
  • [3] Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor
    Liu, J. W.
    Liao, M. Y.
    Imura, M.
    Watanabe, E.
    Oosato, H.
    Koide, Y.
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (08)
  • [4] Electrical properties of Al/CaF2/i-diamond metal-insulator-semiconductor field-effect-transistor fabricated by ultrahigh vacuum process
    Yun, Y
    Maki, T
    Tanaka, H
    Shirakawa, Y
    Kobayashi, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11A): : L1293 - L1296
  • [5] GAAS METAL-INSULATOR-SEMICONDUCTOR CAPACITORS AND HIGH TRANSCONDUCTANCE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    REED, J
    FAN, Z
    GAO, GB
    BOTCHKAREV, A
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (20) : 2706 - 2708
  • [6] Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with High Current Density
    Saito, Hisashi
    Matsumoto, Yutaka
    Miyamoto, Yasuyuki
    Furuya, Kazuhito
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (01)
  • [7] FABRICATION OF METAL-INSULATOR-SEMICONDUCTOR DEVICES USING POLYCRYSTALLINE DIAMOND FILM
    KIYOTA, H
    OKANO, K
    IWASAKI, T
    IZUMIYA, H
    AKIBA, Y
    KUROSU, T
    IIDA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A): : L2015 - L2017
  • [8] TEMPERATURE-DEPENDENCE AND EFFECT OF SERIES RESISTANCE ON THE ELECTRICAL CHARACTERISTICS OF A POLYCRYSTALLINE DIAMOND METAL-INSULATOR-SEMICONDUCTOR DIODE
    KANG, WP
    DAVIDSON, JL
    GURBUZ, Y
    KERNS, DV
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1101 - 1107
  • [9] The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine
    Hu, WP
    Liu, YQ
    Xu, Y
    Liu, SG
    Zhou, SQ
    Zhu, DB
    Xu, B
    Bai, CL
    Wang, C
    [J]. THIN SOLID FILMS, 2000, 360 (1-2) : 256 - 260
  • [10] Temperature effects of γ-irradiated metal-oxide-semiconductor field-effect-transistor
    Wang, JP
    Xu, NJ
    Zhang, TQ
    Tang, HL
    Liu, JL
    Liu, CY
    Yao, YJ
    Peng, HL
    He, BP
    Zhang, ZX
    [J]. ACTA PHYSICA SINICA, 2000, 49 (07) : 1331 - 1334
12345