Modelling of GaN high electron mobility transistor on diamond substrate

被引：4
|
作者：
Jarndal, Anwar [1 ]
Du, Xuekun [2 ]
Xu, Yuehang [3 ]
机构：
[1] Univ Sharjah, Dept Elect Engn, Sharjah 27272, U Arab Emirates
[2] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB, Canada
[3] Univ Elect Sci & Technol China, Chengdu, Peoples R China
来源：
IET MICROWAVES ANTENNAS & PROPAGATION | 2021年 / 15卷 / 06期
关键词：
ON-DIAMOND; EQUIVALENT-CIRCUIT; ALGAN/GAN HEMTS; LAYER;
D O I：
10.1049/mia2.12093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A reliable small-signal modelling approach has been developed and applied on GaN-on-diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the quasistatic behaviour of the intrinsic transistor. The frequency independence of the intrinsic elements at active multibias condition has been considered as another objective in addition to measurements' fitting. Physical relevant values for the model elements have been obtained. The model accuracy was also validated by means of S-parameters simulation, which showed a very good fitting of the measured data.
引用
收藏
页码：661 / 673
页数：13
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