Thermally induced deformation and stresses during millisecond flash lamp annealing

被引:0
|
作者
Smith, Mark P. [1 ]
Seffen, Keith A. [1 ]
McMahon, Richard A. [1 ]
Anwand, Wolfgang [2 ]
Skorupa, Wolfgang [2 ]
机构
[1] Univ Cambridge, Dept Engn, Trumpington St, Cambridge CB2 1PZ, Cambridgeshire, England
[2] Forschungszentrum Rossendorf, Inst Ion Beam Phys & Mat Res, Dresden, Saxony, Germany
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A flash lamp has been proposed for annealing wafers with diameters approaching 100 mm. The equipment applies a pulse, with duration 0.5 ms to 20 ms, resulting in large transient thermal gradients in the wafer. In this paper, we present a model for the thermal reaction of this process and its effect upon the mechanical behaviour, in order to predict stresses, shape changes and, to capture practical phenomenon, such as bifurcation of deformation modes. We then use the model to follow changes in the expected response consequent on altering process conditions, as well as exploring important issues associated with scaling to large wafer sizes. The model is further used to predict material yielding leading to permanent deformations. This work presents the first description of the thermo-mechanical response of wafers to flash lamp annealing in the millisecond time regime and is therefore fundamental to the use of this technique in the fabrication of semiconductor devices.
引用
收藏
页码:165 / +
页数:2
相关论文
共 50 条
  • [31] FLASH - LAMP ANNEALING OF PHOSPHORUS AND ANTIMONY IMPLANTED SILICON
    GAIDUK, PI
    KOMAROV, FF
    PILIPENKO, VA
    SOLOVYEV, VS
    STERZHANOV, NI
    [J]. RADIATION EFFECTS LETTERS, 1984, 86 (06): : 213 - 222
  • [32] Minimization of pattern dependence by optimized flash lamp annealing
    Ito, T
    Matsuo, K
    Itokawa, H
    Itani, T
    Tamaoki, N
    Honguh, Y
    Suguro, K
    Yokomori, T
    Owada, T
    Goto, Y
    Nozaki, Y
    Murayama, H
    Kiyama, H
    Kusuda, T
    [J]. FIFTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2005, : 59 - 60
  • [33] FLASH LAMP ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
    BUDINOV, H
    STAVROV, V
    BURKOVA, R
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (02): : K131 - K134
  • [34] A snapshot review on flash lamp annealing of semiconductor materials
    Rebohle, Lars
    Prucnal, S.
    Berencen, Y.
    Begeza, V.
    Zhou, S.
    [J]. MRS ADVANCES, 2022, 7 (36) : 1301 - 1309
  • [35] A snapshot review on flash lamp annealing of semiconductor materials
    Lars Rebohle
    S. Prucnal
    Y. Berencén
    V. Begeza
    S. Zhou
    [J]. MRS Advances, 2022, 7 : 1301 - 1309
  • [36] THERMAL-STRESSES IN SILICON-WAFER DURING PULSED FLASH ANNEALING
    PILIPOVICH, VA
    GATSKEVICH, EI
    MALEVICH, VL
    [J]. EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 309 - 311
  • [37] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM
    COHEN, RL
    WILLIAMS, JS
    FELDMAN, LC
    WEST, KW
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 751 - 753
  • [38] Thermal Deformation of Glass Backplane during Flash Lamp Crystallization Process of Amorphous Silicon
    Kim, Dong Hyun
    Kim, Byung-Kuk
    Kim, Hyoung June
    Chung, Haseung
    Park, Seungho
    [J]. TRANSACTIONS OF THE KOREAN SOCIETY OF MECHANICAL ENGINEERS B, 2012, 36 (10) : 1025 - 1032
  • [39] Microstructure of polycrystalline silicon films formed through explosive crystallization induced by flash lamp annealing
    Japan Advanced Institute of Science and Technology , 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
    不详
    [J]. Jpn. J. Appl. Phys, 1600, 4 PART 2
  • [40] Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
    Ohdaira, Keisuke
    Ishii, Shohei
    Tomura, Naohito
    Matsumura, Hideki
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)