Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films

Thin films of NiO were deposited on Pt/Ta/glass sub-strates using a radio frequency (RF) sputtering method. The NiO thin films showed polycrystalline nature, indicating preferentially (111)-oriented structure. The resistive random access memory (RRAM) capacitor of a Pt/NiO/Pt structure exhibited unipolar switching characteristics and bistable resistivities for 200 repeated switching cycles. Furthermore, RRAM nanobits array was formed on the NiO thin films by applying a bias. The RRAM nanobits had a diameter of approximately 8 nm and were observed via a conducting atomic force microscope (CAFM). The density of the RRAM nanobits array was estimated to be approximately 0.64 Tbit/cm(2).