Electrical and structural properities of PZT films deposited by MOCVD using ultrasonic nebulization

被引：0
|
作者：
Lee, CH [1 ]
Yeom, JH [1 ]
机构：
[1] Keimyung Univ, Dept Mat Engn, Dalseo Gu 704701, Daegu, South Korea
来源：
INTEGRATED FERROELECTRICS | 2002年 / 47卷
关键词：
PZT thin film; MOCVD; ultrasonic nebulization; stoichiometric composition;
D O I：
10.1080/10584580190044632
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pb(ZrxTi1-x)O-3 [PZT] thin films were deposited on Pt/MgO/Si and MgO/Si substrates by MOCVD using the ultrasonic nebulization and their structural and electrical properties were investigated. At the substrate temperatures between 500degreesC similar to 550degreesC, PZT thin films grew with single perovskite phase. However, Pb contents of PZT thin films were very low compared to those in the source solution, which was due to large volatility of Pb at those temperatures. To obtain a stoichiometric PZT thin films, therefore, composition ratio of [Pb]/[Zr+Ti]=2 in the source solution was used in this experiment. The remanent polarization of PZT films was about 17muC/cm(2) at +/-5Voltage. Leakage-current density of PZT thin films was about 9.6x10(-5) A/cm(2) at +10V and 1.4x10(-5) A/cm(2) at -10V. Fatigue test of this PZT thin film shows stable behavior and no degradation characteristic after 10(10) cycle.
引用
收藏
页码：167 / 176
页数：10
相关论文
共 50 条
  • [41] Microstructure and electrical properties of PZT thin films deposited by laser ablation on template layer
    Wang, ZJ
    Karibe, I
    Kokawa, H
    Maeda, R
    INTEGRATED FERROELECTRICS, 2002, 46 : 187 - 195
  • [42] Aerosol-mediated fabrication of porous thin films using ultrasonic nebulization
    Walsh, Dominic
    Arcelli, Laura
    Swinerd, Vicky
    Fletcher, Jane
    Mann, Stephen
    Palazzo, Barbara
    CHEMISTRY OF MATERIALS, 2007, 19 (03) : 503 - 508
  • [43] Preparation of Pb(Mg1/3Nb2/3)O3 thin films by MOCVD using ultrasonic nebulization
    Kim, SI
    Lee, CH
    INTEGRATED FERROELECTRICS, 2004, 68 : 45 - 52
  • [44] Electrical properties of PZT thin films grown on Ir/IrO2 bottom electrodes by MOCVD
    Fujisawa, H
    Hyodo, S
    Jitsui, K
    Shimizu, M
    Niu, H
    Okino, H
    Shiosaki, T
    INTEGRATED FERROELECTRICS, 1998, 21 (1-4) : 107 - 114
  • [45] Effect of starting materials on deposition behavior, crystal structure and electrical properties of MOCVD-PZT films
    Funakubo, H
    Ozeki, T
    ELECTROCERAMICS IN JAPAN VI, 2003, 248 : 57 - 60
  • [46] Electrical properties of PZT thin films grown on Ir/IrO2 bottom electrodes by MOCVD
    Himeji Inst of Technology, Hyogo, Japan
    Integr Ferroelectr, 1 -4 pt 1 (107-114):
  • [47] The electrical property of CeO2 films deposited by MOCVD on Si(100) -: Annealing effects on the electrical property
    Tagui, K.
    Nakamura, K.
    Ogawa, M.
    Saito, K.
    Suzuki, S.
    Ishibashi, K.
    Yamamoto, Y.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (07) : D73 - D75
  • [48] Preparation of PZT thin films by liquid-source MOCVD using of cyclohexane solvent
    Nishioka, Y
    Masuda, T
    Kajinuma, M
    Yamada, T
    Uematsu, M
    Suu, K
    INTEGRATED FERROELECTRICS, 2003, 59 : 1445 - 1451
  • [49] Ir thin films for PZT capacitors prepared by MOCVD using a new Ir precursor
    Fujisawa, H
    Watari, S
    Shimizu, M
    Oshima, N
    FERROELECTRIC THIN FILMS XII, 2004, 784 : 269 - 274
  • [50] Microstructures and electrical characteristics of PZT thin films deposited on stainless steel using a LaNiO3 buffer layer
    Liu, Y
    Xu, CN
    ASIAN CERAMIC SCIENCE FOR ELECTRONICS I, 2002, 214-2 : 117 - 121
12345