Electrical and structural properities of PZT films deposited by MOCVD using ultrasonic nebulization

Pb(ZrxTi1-x)O-3 [PZT] thin films were deposited on Pt/MgO/Si and MgO/Si substrates by MOCVD using the ultrasonic nebulization and their structural and electrical properties were investigated. At the substrate temperatures between 500degreesC similar to 550degreesC, PZT thin films grew with single perovskite phase. However, Pb contents of PZT thin films were very low compared to those in the source solution, which was due to large volatility of Pb at those temperatures. To obtain a stoichiometric PZT thin films, therefore, composition ratio of [Pb]/[Zr+Ti]=2 in the source solution was used in this experiment. The remanent polarization of PZT films was about 17muC/cm(2) at +/-5Voltage. Leakage-current density of PZT thin films was about 9.6x10(-5) A/cm(2) at +10V and 1.4x10(-5) A/cm(2) at -10V. Fatigue test of this PZT thin film shows stable behavior and no degradation characteristic after 10(10) cycle.