Focused ion beam-induced fabrication of tungsten structures

被引：63

作者：

Ishida, M

Fujita, J

Ichihashi, T

Ochiai, Y

Kaito, T

Matsui, S

机构：

[1] NEC Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] Japan Sci & Technol Corp, JST, Tsukuba, Ibaraki 3058501, Japan

[3] Seiko Instruments Inc, Oyama, Shizuoka 4101393, Japan

[4] Himeji Inst Technol, Himeji, Hyogo 6781201, Japan

[5] Japan Sci & Technol Corp, JST, Kamigori, Hyogo 6781201, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期

关键词：

D O I：

10.1116/1.1627806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sidewall morphology on three-dimensional (313) tungsten structures grown with focused ion beam-induced chemical vapor deposition (FIB-CVD) using tungsten hexacarbonyl [W(CO)(6)] was improved with a milling process by using FIB treatment subsequent to growth. As a result, Young's modulus was measured at 300 GPa at maximum and density was measured at 13.0 x 10(3) kg/m(3). Young's modulus increased 35% after heat treatment at 600degreesC in a vacuum while density did not change. Transmission electron microscopy revealed crystallization of tungsten trioxide after the heat treatment. (C) 2003 American Vacuum Society.

引用

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页码：2728 / 2731

页数：4

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