Focused ion beam-induced fabrication of tungsten structures

被引:63
|
作者
Ishida, M
Fujita, J
Ichihashi, T
Ochiai, Y
Kaito, T
Matsui, S
机构
[1] NEC Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Japan Sci & Technol Corp, JST, Tsukuba, Ibaraki 3058501, Japan
[3] Seiko Instruments Inc, Oyama, Shizuoka 4101393, Japan
[4] Himeji Inst Technol, Himeji, Hyogo 6781201, Japan
[5] Japan Sci & Technol Corp, JST, Kamigori, Hyogo 6781201, Japan
来源
关键词
D O I
10.1116/1.1627806
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sidewall morphology on three-dimensional (313) tungsten structures grown with focused ion beam-induced chemical vapor deposition (FIB-CVD) using tungsten hexacarbonyl [W(CO)(6)] was improved with a milling process by using FIB treatment subsequent to growth. As a result, Young's modulus was measured at 300 GPa at maximum and density was measured at 13.0 x 10(3) kg/m(3). Young's modulus increased 35% after heat treatment at 600degreesC in a vacuum while density did not change. Transmission electron microscopy revealed crystallization of tungsten trioxide after the heat treatment. (C) 2003 American Vacuum Society.
引用
下载
收藏
页码:2728 / 2731
页数:4
相关论文
共 50 条
  • [31] Focused electron beam-induced deposition at cryogenic temperatures
    M. Bresin
    B. L. Thiel
    M. Toth
    K. A. Dunn
    Journal of Materials Research, 2011, 26 : 357 - 364
  • [32] Industrial perspective on focused electron beam-induced processes
    Bret, Tristan
    Hofmann, Thorsten
    Edinger, Klaus
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 117 (04): : 1607 - 1614
  • [33] Focused electron beam-induced deposition at cryogenic temperatures
    Bresin, M.
    Thiel, B. L.
    Toth, M.
    Dunn, K. A.
    Toth, M.
    JOURNAL OF MATERIALS RESEARCH, 2011, 26 (03) : 357 - 364
  • [34] Industrial perspective on focused electron beam-induced processes
    Tristan Bret
    Thorsten Hofmann
    Klaus Edinger
    Applied Physics A, 2014, 117 : 1607 - 1614
  • [35] Studies of structures elaborated by focused ion beam induced deposition
    Prestigiacomo, M
    Roussel, L
    Houël, A
    Sudraud, P
    Bedu, F
    Tonneau, D
    Safarov, V
    Dallaporta, H
    MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) : 175 - 181
  • [36] Simulation of dynamic growth rate of focused ion beam-induced deposition using Hausdorff distance
    Lee, Kang-In
    Lee, Hyun-Taek
    Jang, Ki-Hwan
    Ahn, Sung-Hoon
    SENSORS AND ACTUATORS A-PHYSICAL, 2019, 286 : 169 - 177
  • [37] Controlled fabrication of advanced functional structures on the nanoscale by means of electron beam-induced processing
    Schmidt, Sebastian W.
    Foucher, Johann
    Penzkofer, Christian
    Irmer, Bernd
    SMART SENSORS, ACTUATORS, AND MEMS VI, 2013, 8763
  • [38] Tungsten-based pillar deposition by helium ion microscope and beam-induced substrate damage
    Kohama, Kazuyuki
    Iijima, Tomohiko
    Hayashida, Misa
    Ogawa, Shinichi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (03):
  • [39] Focused ion beam fabrication of novel core-shell nanowire structures
    He, Li
    Johansson, Jonas
    Murayama, Mitsuhiro
    Hull, Robert
    NANOTECHNOLOGY, 2008, 19 (44)
  • [40] FOCUSED ION-BEAM FABRICATION OF SUB-MICRON GOLD STRUCTURES
    BLAUNER, PG
    RO, JS
    BUTT, Y
    THOMPSON, CV
    MELNGAILIS, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) : C538 - C538