Focused ion beam-induced fabrication of tungsten structures

被引：63
|
作者：
Ishida, M
Fujita, J
Ichihashi, T
Ochiai, Y
Kaito, T
Matsui, S
机构：
[1] NEC Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Japan Sci & Technol Corp, JST, Tsukuba, Ibaraki 3058501, Japan
[3] Seiko Instruments Inc, Oyama, Shizuoka 4101393, Japan
[4] Himeji Inst Technol, Himeji, Hyogo 6781201, Japan
[5] Japan Sci & Technol Corp, JST, Kamigori, Hyogo 6781201, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期
关键词：
D O I：
10.1116/1.1627806
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sidewall morphology on three-dimensional (313) tungsten structures grown with focused ion beam-induced chemical vapor deposition (FIB-CVD) using tungsten hexacarbonyl [W(CO)(6)] was improved with a milling process by using FIB treatment subsequent to growth. As a result, Young's modulus was measured at 300 GPa at maximum and density was measured at 13.0 x 10(3) kg/m(3). Young's modulus increased 35% after heat treatment at 600degreesC in a vacuum while density did not change. Transmission electron microscopy revealed crystallization of tungsten trioxide after the heat treatment. (C) 2003 American Vacuum Society.
引用
收藏
页码：2728 / 2731
页数：4
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