GaN L3 Photonic Crystal Cavities With an Average Quality Factor in Excess of 16000 in the Near Infrared

被引：0

作者：

Trivino, Noelia Vico ^{[1
]}

Minkov, Momchil ^{[2
]}

Urbinati, Giulia ^{[3
]}

Galli, Matteo ^{[3
]}

Carlin, Jean-Francois ^{[1
]}

Butte, Raphael ^{[1
]}

Savona, Vincenzo ^{[2
]}

Grandjean, Nicolas ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Lab Theoret Phys Nanosyst, CH-1015 Lausanne, Switzerland

[3] Univ Pavia, Dipartimento Fis, I-27100 Pavia, Italy

来源：

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN L3 photonic crystal cavities were fabricated based on a genetic algorithm optimization. Optical characterization of several replicas led to an average unloaded quality factor of 16900, which is well accounted for by first-principles simulations.

引用

页数：2

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