GaN L3 Photonic Crystal Cavities With an Average Quality Factor in Excess of 16000 in the Near Infrared

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作者
Trivino, Noelia Vico [1 ]
Minkov, Momchil [2 ]
Urbinati, Giulia [3 ]
Galli, Matteo [3 ]
Carlin, Jean-Francois [1 ]
Butte, Raphael [1 ]
Savona, Vincenzo [2 ]
Grandjean, Nicolas [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Lab Theoret Phys Nanosyst, CH-1015 Lausanne, Switzerland
[3] Univ Pavia, Dipartimento Fis, I-27100 Pavia, Italy
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaN L3 photonic crystal cavities were fabricated based on a genetic algorithm optimization. Optical characterization of several replicas led to an average unloaded quality factor of 16900, which is well accounted for by first-principles simulations.
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页数:2
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