Ge Quantum Well Modulators on Si

被引：0
|
作者：
Miller, D. A. B. [1 ]
Schaevitz, R. K. [1 ]
Roth, J. E. [1 ]
Ren, Shen [1 ]
Fidaner, Onur [1 ]
机构：
[1] Stanford Univ, Ginzton Lab, Stanford, CA 94305 USA
来源：
SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期
关键词：
D O I：
10.1149/1.2986844
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We discuss the physics and device structures of optical modulators using germanium quantum wells grown on silicon substrates. These exploit the recently discovered strong electroabsorption mechanism in such wells, and promise high performance optical modulators oil silicon.
引用
收藏
页码：851 / 856
页数：6
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