Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots

被引：0
|
作者：
O. A. Shegai
A. Yu. Berezovsky
A. I. Nikiforov
V. V. Ul’yanov
机构：
[1] Russian Academy of Sciences,Joint Institute of Semiconductor Physics, Siberian Division
来源：
Physics of the Solid State | 2005年 / 47卷
关键词：
Spectroscopy; Silicon; State Physics; Light Intensity; Germanium;
D O I：
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中图分类号：
学科分类号：
摘要：
A nonmonotonic dependence of the lateral photoconductivity (PC) on the interband light intensity is observed in Si/Ge/Si and Si/Ge/SiOx structures with self-organized germanium quantum dots (QDs): in addition to a stepped increase in PC, a stepped decrease in PC is also observed. The effect of temperature and drive field on these features of the PC for both types of structures with a maximum nominal thickness of the Ge layer (NGe) is studied. The results obtained are discussed in the context of percolation theory for nonequilibrium carriers localized in different regions of the structure: electrons in the silicon matrix and holes in QDs.
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页码：30 / 33
页数：3
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